| PART |
Description |
Maker |
| CM200DY-28H |
IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM75DY-28H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V
|
Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| 2MBI75P-140 |
IGBT(1400V 75A) 100 A, 1400 V, N-CHANNEL IGBT
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| FGA20S140P |
1400V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN
High Speed IGBT
|
IXYS, Corp.
IXYS Corporation
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGM20N60A IXGM20N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSM40N60 IXSM40N60A IXSH40N60A IXSH40N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
